In the first year of study, student chooses three courses from the first year of their chosen domain (Nanotechnologies and microsystems).
In the second year, student chooses three courses from the group of all elective courses at second year of doctoral academic studies, regardless of the elective domain the course belongs to.
1. YEAR
Elective Block (3 out of 6)
Code: 3DEN1I01
Number of classes per week:
- Lectures:3
- Exercises: 0
ECTS: 10
Course outline:Crystal structure and solid state theory. Quantum and statistical physics of a solid state. Boltzmann's kinetic equation. Semiconductor in thermal equilibrium. Excess carrier concentrations and transport of carriers. Generation-recombination mechanisms. Metal-semiconductor junction and P-N junction. Non-equilibrium phenomena in the P-N junction and transport equations. Models of carriers mobility. MOS structure. Charge sheet model and C-V plot. MOS transistors and short channel effects. Parasitic effects, hot carriers, high temperature effects. Bipolar devices. SiGe, HEMT and other heterojunction devices. Solar cells, photodetectors, LEDs and laser diodes.Specification for the book of courses
Specification for the book of courses
Code: 3DEN1I02
Number of classes per week:
- Lectures: 3
- Exercises: 0
ECTS: 10
Course outline:Analog microelectronic circuits in practice: General principles of design of analogue microelectronic circuits; Power supply in integrated circuits and active load; Design of circuits with operational amplifiers (CMOS, bipolar, BiCMOS, JFET); Differential and multistage amplifiers; Feedback and stability; The effects of nonideality; Active higher order filters; Oscillators and function generators; A / D converters. Digital microelectronic circuits in practice: Digital circuits in MOS technology; Sequential logic circuits; MOS memory, SRAM, DRAM, Flash; Data converters. Optional: Digital circuits in bipolar technology. ECL and modified ECL circuits. TTL circuits. Logical circuits with Schottky diodes. Digital circuits in BiCMOS technology.
Code: 3DENI03
Number of classes per week:- Lectures: 3
- Exercises: 0
ЕСПБ: 10
Градиво:Materials for nanodevices. Dielectric and ferroelectric materials (electronic properties and quantum effects), magnetic materials (magnetism and magnetotransport in layered structures), organic molecules (electronic structures, properties and reactions), neurons (molecular basis of their electrical excitability). Technological processes and analyzing methods. Nanostructure characterization. Geometric characterization. Surfaces and layers characterization. Functional characterization. Nanosensors and nanoactuators. Nanodevices. Contacts, quantum dots, nanodiodes, nanotranzistors, nanoswitches. Nanooptical devices. Logic nanodevices and RAMs. Mass storage devices. Nanosystems and their application.
Code: 3DEN1I04
Number of classes per week:- Lectures: 3
- Exercises: 0
ECTS: 10
Course outline:Matter and materials. Materials science as an international priority issue. Materials science and engineering. The synthesis (technology) – structure – properties – materials application correlation. Materials-energy-information. Structural properties of materials. Structural hierarchy of materials and symmetry. Crystallography. Modern materials characterization methods (SEM, TEM, EDS, XRD, laser and NMR spectroscopy). Stereological methods (quantitative metallography). Fractals theory as a link between the order and chaos in the material world. Application of fractals in the structural analysis and properties' simulation and materials synthesis technology. Inter-atomic links. Energy and crystal lattices. Crystal defects. Modelling and simulation of novel structures and properties of materials. Phase diagrams and designing of novel materials with controlled properties. Models of the electronic structure of materials. Electric conductivity in metals. Semiconducting materials and their properties. Quantum gaps. Optical properties of semiconductors. The age of electronic ceramic materials. Advanced oxide and non-oxide materials. Liquid crystals. Ferroelectrics. Ferrites and other materials with magnetic properties. Nanopowders, nanomaterials and nanotechnology of the synthesis of advanced materials. Role of materials structure in the high integration of electronic components and electronic parameters in microelectronic devices. Globalization and strategy of research and development of new materials and technologies in the world.
Code: 3DEN1I05
Number of classes per week:- Lectures: 3
- Exercises: 0
ECTS:10
Course outline:Optoelectronics as experimental science, i.e. scientific cycle of theory and experiment, and its multidisciplinary in the viewpoint literature and internet technology, as the basis of study of light and matter. Optics, electrodynamics, electronics, quantum and statistical physics of radiation. Source of light and components of telecommunication devices and systems. Interaction of radiation and matter. Laser light sources. Semiconductor lasers. Some telecommunication laser systems. Information displays, cathode ray, LC, TFT and perspective of development of display technology. Discrete and integrated optoelectronic components and devices. Integrated and quantum optoelectronics. Optical, electro optical and quantum-electrodynamical effects in the optical circuits and devices. Propagation of electromagnetic waves in anisotropic crystals. Integrated optical systems for propagation, modulation, oscillation and switch of light in optical dielectric materials. Optoelectronic materials and technologies. Limits and perspective of development of optoelectronics.
Specification for the book of courses
Code: 3DEN1I06
Number of classes per week:- Lectures: 3
- Exercises: 0
ECTS: 10
Course outline:Heavy Doping Effects in Semiconductors. Transport of Carriers. l-h junctions. The effective surface recombination velocity. Diode. Silicon Bipolar Junction Transistors. Heterojunction Bipolar Transistors. Modeling of Bipolar Junction Transistors. Metal-Semiconductor based Devices. Schottky Barriers and Ohmic Contacts. Field Effect Transistors based on Semiconductor Compounds. GaAs MESFET's. Heterostructure Field Effect Transistors (HFETs). MOSFETs. CMOS/BiCMOS. SOI and 3D structures. Low-voltage and Low-power Devices. Power Devices. Power Bipolar Junction Transistors. Power VDMOS transistors. IGBT. Devices Based on SiC.
Specification for the book of courses
Obligatory
Code: 3DNIR1
Number of classes per week:
- Study and research work: 11
ECTS: 30
Course outline:Specification for the book of courses
3. YEAR
Obligatory
Code: 3DNIR2
Number of classes per week:
- Study and research work: 11
ECTS: 30
Course outline:Specification for the book of courses
Code: 3DZR
Number of classes per week:
- Lectures: 0
- Exercises: 0
ECTS: 30
2. YEAR
Elective Block (3 out of 82)
Courses from the chosen domain (Nanotechnologies and microsystems)
Code: 3DEN3I01
Number of classes per week:
- Lectures: 3
- Exercises: 0
ECTS: 10
Course outline:Introduction. Types and applications of power devices. Structures and technologies: bipolar, CMOS, BiCMOS, SOI. Discrete power devices. PN, PiN and Schottky diodes. Thyristors: SCR, GTO, triac, optically triggered thyristor. Bipolar Transistors. Darlington couple. Static induction power devices: SIT and SITh. MOS power devices: LDMOS and VDMOS transistors, MOS controlled thyristor. IGBT. Electrical characteristics and special effects. High current density effects, quasi-saturation, on-resistance, thermal effects, secondary breakdown, the effects of parasitic elements. Safe operating area (SOA). Electrical SPICE models. Power integrated circuits. Principles of integration of power devices, power modules and hybrid ICs. Monolithic power ICs: high-voltage ICs, smart power ICs and system-on-chip (SoC), isolation of devices on a chip. Functional blocks of smart power ICs. Driving circuits. Voltage references. Circuit for external communication. Protection blocks: over-voltage, over-current and temperature protection. Smart power application examples: smart power in automotive electronics, lighting control, electric motor operation control.
Code: 3DЕNЗI02
Number of classes per week:
- Lectures: 3
- Exercises: 0
ECTS: 10
Course outline:Information-processing systems. Measurement and control systems. Actuators. Sensor definitions and classification. General sensor characteristics and limitations. Parameters definition. Sensor calibration methods. Error corrections. Fabrication technology. Reliability issues. Sensors for radiation, mechanical, thermal ,magnetic , chemical and biological signals. Sensors design and operation. Applications. Smart integrated sensors and actuators. Functional blocks. Micro-electro-mechanical sensors (MEMS), technology, components and systems. Integrated sensors and MEMS components.
Specification for the book of courses
Code: 3DENЗI03
Number of classes per week:
- Lectures: 3
- Exercises: 0
ECTS: 10
Course outline:Elements of reliability theory. Failure, mechanisms, and cause of failure. Reliability function, failure rate, bathtub curve, mean time to failure, mean time between failures, distribution functions (exponential, Weibull, normal, gamma distribution). Degradation and failure of microelectronic devices (defects in the substrate, defects in oxide, breakdown of dielectrics, failures at contacts and metallization, case and terminals). Overstress induced failures (elevated temperature, humidity, electric field, ionizing radiation, electrostatic discharge, mechanical stress and vibration). Reliability and failures in multilayer printed circuits boards, capacitors, coils, lithium-ion batteries, transceiver modules, MEMS components, solar modules. Failure diagnostics, microscopy and electrical testing. Accelerated reliability testing - appropriate tests and equipment, acceleration factor for individual tests. MIL-STD and IEC standards. Analysis of the time to failure. Chi-square test. Application of the Weibull + software package for reliability modeling.
Code: 3DENЗI04
Number of classes per week:
- Lectures: 3
- Exercises: 0
ECTS: 10
Course outline:Prognosis of material properties as a basis for obtaining materials with predetermined properties. Scientific chain of theory-experiment. Multidisciplinary approach to studying prognosis from the point of view of availability of literature and the Internet. Evolution of material structure and nanometerials. Diagram structure-properties-technology from the standpoint of electronic devices and the prognosis of metal, ceramic, amorphous, and other materials. Symmetry in solid state and liquid -crystal materials. Micro and atomic structure of ideal and non-ideal crystalline materials. Electronic structure as the basis for a modern prognosis of material properties. Thermodynamic methods of prognosis. A classical and statistical-thermodynamic approach to the study of thermal, mechanical, electromagnetic, galvanomagnetical and electro-optical phenomens. Properties and technology of materials. The prognosis of the materials properties on the standpoint requires micro, nano, opto and low-temperature electronics. Perspectives of prognosis development with reference to modern technologies.
Specification for the book of courses
Code: 3DEN3I05
Number of classes per week:
- Lectures: 3
- Exercises: 0
ECTS: 10
Course outline:New ceramic civilization. Global strategy of research and development of electronic ceramic materials. Correlation between the structure hierarchy (micro- and nanostructural properties) and phase composition on electric, semiconducting, dielectric and magnetic properties of ceramic materials. Modern characterization methods for ceramic materials. Stereological methods. Fractals and electronic ceramics. Computer technologies in the research, characterization and simulation of novel structures and properties of ceramic materials. Nanostructure and nanotechnology in electronic ceramics. Ceramic materials synthesis technology. Eclectrically conductive ceramics. Ceramic materials for various components, functions and properties: condensers, sensors, ferroelectrics and PTCR and NTCR effects. Optoelectronic ceramics. Optical fibers. Ceramic materials for microwave components of varying frequency ranges. Ferroelectric materials and other ceramic materials in medicine and robotics. Electronic ceramic materials for new energy sources, telecommunications and information technologies. Ceramic materials for space technologies. Ceramic materials and high integration and packaging of electronic components and parameters within microelectronic devices. International trends in manufacturing and recycling of ceramics materials, and global security considerations related to advanced ceramic materials and technologies.
Code: 3DЕN3I06
Number of classes per week:
- Lectures: 3
- Exercises: 0
ECTS: 10
Course outline:Introduction. Modeling and simulation. The application of computers and software tools in the design of microelectronic components and systems. Design of experiment (DOE). Simulation and modeling of technological processes for the production of microelectronic components. Process modeling of ion implantation, diffusion, oxidation, etching and lithographic processes. Simulation of the electrical characteristics of the components. The system of fundamental semiconductor equations, models of mobility, generation and recombination of carriers. Domain simulation disretizacija and solving systems of partial differential equations. TCAD software tools. Electrical modeling. Models of passive and active components. Parameter extraction. Analytical, physical, numerical modeling and neural networks. Verification and calibration. Structural modeling. 2D and 3D structures. Thermal and mechanical stresses.
Code: 3DEN3I07
Number of classes per week:
- Lectures: 3
- Exercises: 0
ECTS: 10
Solar energy. The photovoltaic effect. Generation of charge carriers by the absorption of light. Absorption in direct and indirect semiconductors. Solar cells. The basic mechanisms of energy conversion. Current-voltage characteristics. Photocurrent, saturation currents and ohmic resistance of solar cells. High efficiency solar cells. Structures and processes for high efficiency solar cells. Materials and technologies for the production of Si solar cells. New materials, new concepts and future developments. Types of solar cells. Analysis and characterization of solar cells. Current-voltage characteristics, spectral response. Modeling of solar cells TCAD software tools. Generalized PSpice solar cells. PV systems. Components of PV systems. Types of PV systems. Applications of PV systems and their installation. Small PV systems to power mobile devices. Impact of PV systems. Recycling of PV systems. Price and PV markets. The future of PV systems.
Code: 3DEN3I08
Number of classes per week:
- Lectures: 3
- Exercises: 0
ECTS: 10
Course outline:Basic terms. Materials for microsystems - Materials in silicon technologies: monocrystalline silicon, polycrystalline silicon, silicon dioxide, silicon nitride, metal films, polymers. Materials in other technologies: silicon carbide, diamond, gallium arsenide and other III / V semiconductor compounds, piezoelectric ceramics. Material properties and physical effects. Technological processes in the production of microsystems - Standard technological processes: lithographic processes, thin layer deposition processes: CVD processes, PVD processes, Wet and dry etching.Other technological processes: anodic bonding, sol-gel deposition, electrolytic deposition. Technologies of Micro Machines. Surface micromachining, volume micromachining, LIGA, DXRL and EFAB technologies, assembling and integrating microsystems into enclosures. Flow diagram of microsystem design. Characterization of components and subsystems. Integration of analog and digital components of the microsystem. Microsystem power supply. Performance optimization.
Specification for the book of courses
Code: 3DEN3I09
Number of classes per week:
- Lectures: 3
- Exercises: 0
ECTS: 10
Course outline:Accelerated tests for lifetime estimation in MOS transistor. Methods of designing experiments. Bias temperature stressing of MOS transistor. The influence of bias temperature stressing on the electrical characteristics of the transistor. Modeling of electrical parameters of MOS transistors. Voltage (classical model based on linear extrapolation, VG model, 1/VG model, power-law model E-n) and temperature models for lifetime estimation of MOS transistors under normal operating conditions. Determination of the experimental lifetime values. Lifetime estimation - extrapolation to normal operating conditions. Analysis of the influence of the selection of the electrical parameter, the failure criteria, the range of selected voltages and temperatures, and the chosen model for lifetime estimation.
Code: 3DЕN3I10
Number of classes per week:
- Lectures: 3
- Exercises: 0
ECTS: 10
Course outline:Properties of gamma and neutron radiation. Defects caused by radiation in microelectronic devices. The impact of radiation on the electrical characteristics of microelectronic devices. Mechanisms of instability characteristics in microelectronic devices. Annealing of defects.
Groups of courses from all other domains
- Electrical Machines and Transformes - Selected Chapters
- Electrical Machines and Power Converters for Renewable Energy Sources
- Digital Control of Electrical Drives and Power Converters
- Computation of Lightning Overvoltages
- Power Cable Engineering
- Power Quality in Distribution Networks
- Active Distribution Networks and Microgrids
- Digital Processing of Audio Signal
- Digital Circuits and Systems Design
- Embedded Systems Design
- System-on-Chip Design
- DSP Architectures and Algorithms
- Electronic Circuits Testing
- Reconfigurable Systems Synthesis of Filters
- RF Systems Architectures
- Computer Vision
- Ultrasonic Technique
- Measurement and Acquisition Systems
- Industrial Measurement and Information Systems
- Measurement and Information Technologies
- Medical and Bioelectronic Measurement Technique
- Mathematical Methods of Optimization
- Analysis of Numerical Algorithms
- Spectral graph theory
- Highly Efficient Iterative Methods
- Simulation of Industrial Systems
- Mathematical Models in Industry
- Mathematical Foundations of Statistical Learning and Applications
- Devices of Vacuum and Gas Electronics
- Medical Physics
- Semiconductor Devices and Technologies
- Sensors and Actuators
- Technological Processes in Gasses and Vacuum
- Design and Analysis of Parallel Algorithms
- Advanced Topics in Fault Tolerant System Design
- Bioinformatics
- Medical Informatics
- Applications of Spectral Techniques for Digital Devices Design
- Advanced Topics in Mobile and Ubiquitous Computing
- Advanced Topics in Computer Graphics
- Advanced Topic in Intelligent Systems
- Advanced Topics in Specialized Information Systems
- Mathematical Fundament of the Game Theory
- Advanced Topics in E-Learning Technologies
- Web Mining and Information Retrieval
- Audio Communications
- Antennas and Propagation
- Applications of Neural Networks in Telecommunications
- Satellite Communication Systems
- RF and Microwave Amplifiers
- Electromagnetic Compatibility and Signal Integrity
- Detection of Signals in Noise
- Communication Algorithms and Applications
- 5G and 6G Mobile Communications
- Information Theory and Source Coding
- Statistical Signal Processing
- Digital Communications Over Fading Channel
- Coherent Optical Telecommunication Systems
- Theory and Applications of Software Radio
- Advanced Modeling Techniques for RF Applications
- Free-space Optical Telecommunications
- Advanced Signal and Data Processing
- Methods for Steady-state Electromagnetic Fields Calculation
- Inverse problems in Electromagnetics
- Bounday Element Method in Electromagnetics
- Digital Control Techniques
- Optimal Control
- Variable Structure Systems
- Distributed Computer Control
- Predictive Control
- Adaptive Control Systems
Obligatory
Code: 3DNIR2
Number of classes per week:
- Study and research work: 11
ECTS: 30
Course outline:Specification for the book of courses
Doctor of Science in electrical engineering and computing